关键词：
掺杂技术
电气性能
电阻式
记忆体
兴奋剂
随机存取存储器
纳米晶体
电铸工艺
摘要：
In this paper, improvements of resistive random access memory (RRAM) using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points: eliminating the electroforming process, reducing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high resistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effective way of improving the electrical performance of RRAM.
